Measurement of the Effective Sensitive Volume of FAMOS Cells of an Ultraviolet Erasable Programmable Read Only Memory

Topics:
Electrical and Electronic
Tags:
Measurement,
ROM,
Volume
Source:
Institute of Electrical and Electronics Engineers

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Overview: This paper describes a method for measuring the sensitive volume of the oxide which makes up the collection region for erasure surrounding the floating gate of the FAMOS cell of an Ultraviolet erasable Programmable Read Only Memory (UVPROM) using the data acquired from the output of the pins of the device. A direct measurement of the dose required to erase the Floating gate Avalanche injected Metal Oxide Silicon (FAMOS) cell yields a measurement of the volume of oxide which collects the charge. Another method using target theory to determine the sensitive volume of the device is also presented with good agreement between the methods.

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Format: PDF | Size: 154KB | Date: Feb 2001 | Pages: 8

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