High Brightness AlGaInP Light-Emitting Diodes

Topics:
Electrical and Electronic
Tags:
Engineering,
IEEE,
Light-emitting Diode
Source:
Institute of Electrical and Electronics Engineers

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Overview: This paper reviews the recent progress of AlGaInP high brightness light-emitting diodes. After the discussion of some basic material properties and the general problem of light extraction the paper discusses several approaches of high efficiency devices. AlGaInP materials and devices have led to major advances in high-brightness LEDs. The fabrication of AlGaInP-based light emitters dates back to the mid eighties. It is closely related to the development of metal-organic vapor phase epitaxy (MOVPE) because the standard growth technologies for conventional LEDs like liquid-phase epitaxy (LPE) or hydride vapor phase epitaxy (HVPE) were not suitable for the growth of AlGaInP.

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Format: PDF | Size: 439KB | Date: Jan 2002 | Pages: 12

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