Improved Electrical and Thermal Performance of Ultra-thin RF LDMOS Power Transistors
- Topics:
- Electrical and Electronic
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- Agere Systems Inc.,
- Transistor,
- Software,
- Semiconductors,
- Performance Management,
- Performance,
- Managerial Accounting,
- Human Resources,
- Hardware,
- Finance,
- ...
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- Agere Systems
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Overview: This paper presents the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a proprietary process, we fabricated such devices with a thickness as reduced as 40µm. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.
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Format: PDF | Size: 426KB | Date: Dec 2002 | Pages: 4
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